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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2716AGR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2716AGR is P-Channel MOS Field Effect
Transistor designed for power management applications of
notebook computers and Lithium-Ion battery protection circuit.
8
5
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
FEATURES
? Low on-state resistance
R DS(on)1 = 7.0 m Ω MAX. (V GS = ? 10 V, I D = ? 7.0 A)
R DS(on)2 = 11.3 m Ω MAX. (V GS = ? 4.5 V, I D = ? 7.0 A)
1
5.37 MAX.
4
6.0 ±0.3
4.4
0.8
? Low input capacitance
C iss = 3000 pF TYP.
0.5 ±0.2
? Built-in gate protection diode
1.27 0.78 MAX.
0.10
? Small and surface mount package (Power SOP8)
0.40
+0.10
–0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals are connected.)
Drain to Source Voltage (V GS = 0 V)
V DSS
? 30
V
Gate to Source Voltage (V DS = 0 V)
V GSS
m 20
V
EQUIVALENT CIRCUIT
Drain Current (DC)
Drain Current (pulse)
Note1
I D(DC)
I D(pulse)
m 14
m 140
A
A
Drain
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Note2
Note3
P T1
P T2
T ch
T stg
2
2
150
? 55 to +150
W
W
° C
° C
Gate
Gate
Protection
Body
Diode
Single Avalanche Current
Single Avalanche Energy
Note4
Note4
I AS
E AS
? 14
19.6
A
mJ
Diode
Source
Notes 1.
2.
3.
4.
PW ≤ 10 μ s, Duty Cycle ≤ 1%
Mounted on ceramic substrate of 1200 mm 2 x 2.2 mm
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
Starting T ch = 25 ° C, V DD = ? 15 V, R G = 25 Ω , L = 100 μ H, V GS = ? 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19278EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
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